Samsung 990 PRO SSD 4TB PCIe 4.0 NVMe M.2

Discover the incredible performance and speed of Samsung 990 Pro SSD of 4TB, a solid state unit designed to meet the needs of the most demanding users. With the latest PCIE 4.0 NVME M.2 technology, this SSD offers reading speeds of up to 7,450 mb/s and writing speeds of up to 6,900 Mb/s, which makes it an ideal option for gamers, content creators and professionals who require rapid access to large volumes of data.

The compact design M.2 allows a simple installation in a wide range of devices, from laptops to work stations, optimizing space and improving cooling. Thanks to its advanced thermal management technology, the Samsung 990 PRO guarantees optimal performance even in the most intensive tasks, minimizing the risk of overheating and ensuring exceptional durability.

With a generous 4TB capacity, you will have enough space to store your games, applications and multimedia files without worrying about running out of storage. In addition, it has advanced security characteristics, such as 256 -bit AES encryption, which protects your sensitive data against unauthorized access.

Whether you are editing videos in 4K, playing the last titles or working with design software, the Samsung 990 Pro SSD will provide you with the speed and capacity you need to bring your productivity to the next level. With its combination of performance, reliability and safety, this SSD is the perfect choice for those who do not conform to less. Get yours and experience the storage revolution!

Technical Specifications

• Brand Samsung
• Model MZ-V9P4T0BW
• Type – SSD
• Capacity – 4TB
• Format – M.2 2280
• Connection – PCIe Gen 4.0 x4, NVMe 2.0
• Features – TRIM Support
• S.M.A.R.T Support
• GC (Garbage Collection): Auto Garbage Collection Algorithm
• Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
• Device Sleep Mode Support
• Sequential Read: 7,450 MB/s
• Sequential Write: 6,900 MB/s
• Random Read (4KB, QD32): 1,600,000 IOPS
• Random Write (4KB, QD32): 1,550,000 IOPS
• Random Read (4KB, QD1): 22,000 IOPS
• Random Write (4KB, QD1): 80,000 IOPS
• Environment
• Average Power Consumption: Average 6.5 W Maximum 8.6 W (burst mode)
• Idle Power Consumption: Max. 55 mW
• Supported Voltage: 3.3 V ± 5 % allowed voltage
• Durability (MTBF): 1.5 Million Hours Reliability (MTBF)
• Temperature: 0 – 70ºC
• Shock: 1,500 G & 0.5 ms
• Dimensions and weight
• 80 x 22 x 2.3 mm
• 9.0 g
• Revision date 08-01-2024 by RTY