Samsung 990 PRO SSD 2TB PCIe 4.0 NVMe M.2

Discover the incredible performance of the Samsung 990 Pro SSD of 2TB, a solid disc designed to bring your computer experience to a new level. With its PCIE 4.0 NVME M.2 technology, this SSD offers exceptional reading and writing speeds, reaching up to 7,450 mb/s and 6,900 Mb/s respectively. This ultra -grape speed transforms the way you manage your files, allowing you to load games, applications and operating systems in seconds.

The Samsung 990 Pro not only stands out for its speed, but also for its reliability. Equipped with Dynamic Thermal Guard thermal technology, it will maintain optimal temperatures during its operation, avoiding overheating and guaranteeing consistent performance. In addition, its compact design M.2 makes it ideal for laptops and desktop PCs, occupying a minimum space without sacrificing power.

With a 2TB capacity, you will have more than enough space to store your favorite games, creative projects and multimedia files without worrying about running out of space. Its durability is supported by the guarantee of up to 5 years and high resistance to damage, which makes it a safe investment for any technology enthusiast.

Compatible with a wide range of operating systems and motherboard, the Samsung 990 Pro SSD is the perfect choice for those who seek to maximize the performance of their equipment. Update your system with this latest generation SSD and experience the speed and efficiency that only Samsung can offer.

Technical Specifications

• Brand Samsung
• Model MZ-V9P2T0BW
• Type – SSD
• Capacity – 2TB
• Format – M.2 2280
• Connection – PCIe Gen 4.0 x4, NVMe 2.0
• Features – TRIM Support
• S.M.A.R.T Support
• GC (Garbage Collection): Auto Garbage Collection Algorithm
• Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
• Device Sleep Mode Support
• Sequential Read: 7,450 MB/s
• Sequential Write: 6,900 MB/s
• Random Read (4KB, QD32): 1,400,000 IOPS
• Random Write (4KB, QD32): 1,550,000 IOPS
• Random Read (4KB, QD1): 22,000 IOPS
• Random Write (4KB, QD1): 80,000 IOPS
• Environment
• Average Power Consumption: Average 5.4 W Maximum 8.5 W (burst mode)
• Idle Power Consumption: Max. 55 mW
• Device Sleep Power Consumption: max. 5 mW
• Supported Voltage: 3.3 V ± 5 % allowed voltage
• Durability (MTBF): 1.5 Million Hours Reliability (MTBF)
• Temperature: 0 – 70ºC
• Shock: 1,500 G & 0.5 ms
• Dimensions and Weight
• 80 x 22 x 2.3 mm
• 9.0 g
• Revision Date 25-10-2023 by RTY