Samsung 990 PRO HeatSink SSD 4TB PCIe 4.0 NVMe M.2

Discover the impressive Samsung 990 Pro Heatsink SSD of 4TB, designed to bring your storage experience to a new level. This NVME M.2 solid disc, with PCIE 4.0 technology, offers exceptionally fast reading and writing speeds, reaching up to 7,450 mb/s and 6,900 Mb/s respectively. Ideal for gamers, content creators and professionals who require superior performance, 990 PRO guarantees an instantaneous response and quick access to your heaviest files.

Equipped with an innovative heat dissipator, this SSD not only maximizes the transfer speed, but also maintains an optimal temperature during long sessions of intensive use. Its compact and elegant design is perfectly integrated into any PC or laptop configuration, ensuring that you not only get outstanding performance, but also an aesthetically attractive component.

The Samsung 990 Pro is supported by V-Nand technology, which provides exceptional durability and reliability, which means that your data will be safe even in the most demanding conditions. In addition, with capabilities of up to 4TB, you will have more than enough space to store your games, applications and multimedia files without worrying about storage.

Whether you are editing videos in 4K, playing the most recent titles or running heavy applications, the Samsung 990 Pro Heatsink SSD is the perfect solution for those who seek speed, efficiency and unique performance. Update your system today and experience the difference that a high -end SSD can do in your work and entertainment flow.

Technical Specifications

• Brand Samsung
• Model MZ-V9P4T0CW
• Type – SSD
• Capacity – 4 TB
• Format – M.2 2280
• Connection – PCIe Gen 4.0 x4, NVMe 2.0
• Features – Storage Memory: Samsung V-NAND TLC
• Controller: Samsung in-house Controller
• Cache Memory: Samsung 4GB Low Power DDR4 SDRAM
• TRIM Support
• S.M.A.R.T Support
• GC (Garbage Collection): Auto Garbage Collection Algorithm
• Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
• Support for Device Sleep Mode
• Sequential Read: 7,450 MB/s
• Sequential Write: 6,900 MB/s
• Random Read (4KB, QD32): 1,600,000 IOPS
• Random Write (4KB, QD32): 1,550,000 IOPS
• Random Read (4KB, QD1): 22,000 IOPS
• Random Write (4KB, QD1): 80,000 IOPS
• Environment
• Average Power Consumption: 6.5- 8.6 W
• Idle Power Consumption: Max. 55 mW
• Supported Voltage: 3.3 V ± 5 %
• Durability (MTBF): 1.5 Million Hours Reliability (MTBF)
• Temperature: 0 – 70ºC
• Shock: 1,500 G & 0.5 ms
• Dimensions and Weight
• 80 x 22 x 2.3 mm
• 9.0g
• Revision Date 21-12-2023 by RTY