Samsung 990 PRO HeatSink SSD 2TB PCIe 4.0 NVMe M.2

Discover the SAMSUNG 990 PRO HEATSINK SSD of 2TB, a latest generation storage solution designed to meet the most demanding performance and speed needs. With PCIE 4.0 NVME technology, this SSD offers reading speeds of up to 7,450 MB/s and writing speeds of up to 6,900 MB/s, which makes it one of the fastest in the market. Whether you are editing videos in 8K, playing the last AAA titles or performing intensive multitasking tasks, 990 PRO guarantees an instantaneous response and fluid performance.

Integrated heat dissipator design not only improves aesthetics, but also ensures efficient thermal management, maintaining optimal performance even during long sessions of intensive use. This means that you can enjoy sustained performance without worrying about overheating, which is crucial to maintain the integrity of your data and the longevity of the device.

With a 2TB capacity, you will have more than enough space to store your applications, games, photos, videos and much more. In addition, the Samsung Magician software allows you to manage and optimize the performance of your SSD in a simple way, ensuring that it is always in its best state.

Compatible with a wide range of devices, from laptops to work stations, the Samsung 990 Pro Heatsink SSD is the ideal option for those who seek a significant improvement in their computer experience. Do not satisfy yourself with less; Raise your performance with the power of Samsung 990 Pro.

Technical Specifications

• Brand Samsung
• Model MZ-V9P2T0CW
• Type – SSD
• Capacity – 2TB
• Format – M.2 2280
• Connection – PCIe Gen 4.0 x4, NVMe 2.0
• Features – TRIM Support
• S.M.A.R.T Support
• GC (Garbage Collection): Auto Garbage Collection Algorithm
• Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
• Device Sleep Mode Support
• Sequential Read: 7,450 MB/s
• Sequential Write: 6,900 MB/s
• Random Read (4KB, QD32): 1,400,000 IOPS
• Random Write (4KB, QD32): 1,550,000 IOPS
• Random Read (4KB, QD1): 22,000 IOPS
• Random Write (4KB, QD1): 80,000 IOPS
• Environment
• Average Power Consumption: Average 5.5 W Maximum 8.5 W (burst mode)
• Idle Power Consumption: Max. 55 mW
• Device Sleep Power Consumption: max. 5 mW
• Supported Voltage: 3.3 V ± 5 % allowed voltage
• Durability (MTBF): 1.5 Million Hours Reliability (MTBF)
• Temperature: 0 – 70ºC
• Shock: 1,500 G & 0.5 ms
• Dimensions and Weight
• 80 x 24.3 x 8.2 mm
• 28.0g
• Revision Date 02-05-2023 by RTY